pvdeg.letid.convert_i_to_v

pvdeg.letid.convert_i_to_v(tau, na, current, wafer_thickness, srv, temperature=298.15, e_mobility=0.15, xp=2.4e-07, nc=2.8e+25, nv=1.6e+25, e_g=1.79444e-19)

Return voltage given lifetime and applied current, and cell parameters

Parameters:

• tau (numeric) – Carrier lifetime [s].

• na (numeric) – Doping density [m^-3].

• current (numeric) – applied current [A].

• wafer_thickness (numeric) – Wafer thickness [m].

• srv (numeric) – Surface recombination velocity [m/s].

• temperature (numeric, default 298.15) – Cell temperature [K]

• e_mobility (numeric, default 0.15) – electron mobility [m^2/V-s].

• xp (numeric, default 0.00000024) – width of the depletion region [m]. Treated as fixed width, as it is very small compared to the bulk, so injection-dependent variations will have very small effects.

• nc (numeric, default 2.8e25) – density of states of the conduction band [m^-3]

• nv (numeric, default 1.6e25) – density of states of the valence band [m^-3]

• e_g (numeric, default 1.79444e-19) – bandgap of silicon [J].

Returns:

voltage (numeric) – cell voltage [V]